The MASW-002102-13580 and MASW-003102-13590
devices are SP2T and SP3T broad band switches with
integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form
series and shunt diodes or vias by imbedding them in
low loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and glass
gives HMIC™ devices low loss and high isolation performance
with exceptional repeatability through low
millimeter frequencies. Large bond pads facilitate the
use of low inductance ribbon bonds, while gold backside
metallization allows for manual or automatic chip
bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders
or electrically conductive silver epoxy.