MASW-003102-13590

HMIC Si PIN Diode with Bias

The MASW-002102-13580 and MASW-003102-13590 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy.

Data Sheet Get a Sample Order Now Get a Quote Tech Support Product Inquiry
  1. Home
  2. Products
  3. RF/Microwave & mmWave
  4. Switches
  5. Switches-SP3T
  6. MASW-003102-13590

Product Specifications

Part Number
MASW-003102-13590
Short Description
HMIC™ Si PIN Diode with Bias
Min Frequency(MHz)
2000
Max Frequency(MHz)
18000
Insertion Loss (dB)
0.800
Isolation(dB)
50
IIP3(dBm)
40
Compatible Parts
MADR-009190-000100
CW Incident Power(W)
2
Package Category
Die/Bumped Die
Package
DIE
ROHS
Yes

Features

  • Broad Bandwidth Specified up to 18 GHz
  • RoHS* Compliant
  • 260°C Reflow Compatible
  • Glass Encapsulate Construction
  • Fully Monolithic
  • Low Insertion Loss / High Isolation
  • Integrated Bias Network
  • Usable up to 26 GHz
  • Rugged

Applications

  • Aerospace and Defense
  • ISM

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

Order from MACOM

MASW-003102-13590G
3T HMIC Switch w/Bias network
Order Get a Quote Get a Sample
MASW-003102-13590W
Diode,SP3T W/biasnet
Order Get a Quote Get a Sample