MASW-004240-13170W

HMIC™ PIN Diode with Bias

SP4T switch chip with integrated bias network. It utilizes MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310, which allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Patterned gold backside metal allows for manual or re-flow soldering without the need for wire bond connections to the RF and bias ports. The chip may be soldered using 80Au/20Sn, RoHS compliant solders or electrically conductive silver epoxy. The RF bond pads are labeled J1-J5 and are 375x375µM (15x15mils) square. The DC bias bond pads are labeled B2-B5 and are also 375x375µM (15x15mils) square. The MASW-004240-13170W has been designed for 24GHz automotive radar sensor applications and is also ideally suited for use at 10GHz. The switch is turned on by applying a forward current of +12mA at 4V to the appropriate bias port and is turned off at 0V. The RF bias network has been incorporated into the design for ease of use and space considerations.

Product Specifications

Part Number
MASW-004240-13170W
Short Description
HMIC™ PIN Diode with Bias
Min Frequency(MHz)
10
Max Frequency(MHz)
24000
Insertion Loss (dB)
2.500
Isolation(dB)
50
Compatible Parts
MADR-009190-000100
Package Category
Die/Bumped Die
Package
DIE
ROHS
Yes

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MASW-004240-13170W
Diode,HMIC,24GHz,SP4T
MASW-004240-13170W Distributors