MASW-011111-DIE

AlGaAs SP2T PIN Diode Switch with integrated bias circuits Wideband, 80 - 100 GHz

The MASW-011111-DIE is a wideband SP2T switch manufactured using MACOM’s patented AlGaAs PIN Diode MMIC process on a semi-insulating GaAs substrate. The device is fully passivated with silicon nitride and has an additional layer of BCB for scratch protection. This protective coating prevents damage to the circuit during automated or manual handling.

These devices are suitable for pick and place insertion.

Each RF port contains DC blocking capacitors and a DC bias circuit consisting of high impedance lines and RF radial stubs. This device has gold plated bonding pads at all RF and DC ports. RF and DC ground backside gold plating allows conventional chip bonding techniques using 80Au/20Sn solder, Indalloy solder, or electrically conductive silver epoxy.

Applications include satellite communications, millimeter-wave radar, and 94 GHz imaging in astronomy, defense, and security applications.

Product Specifications

Part Number
MASW-011111-DIE
Short Description
AlGaAs SP2T PIN Diode Switch with integrated bias circuits Wideband, 80 - 100 GHz
Min Frequency(MHz)
80000
Max Frequency(MHz)
100000
Isolation(dB)
25
Insertion Loss (dB)
0.800
Package Category
Die
Package
DIE
ROHS
Yes

Features

  • 80 - 100 GHz Broadband Operating Frequency
  • 0.8 dB Insertion Loss
  • 25 dB Isolation
  • Silicon Nitride Passivation
  • BCB Scratch Protection
  • Lead-Free AlGaAs MMIC Die
  • Die Size: 1.33 x 1.055 x 0.1 mm
  • RoHS* Compliant

Applications

  • ISM

Technical Resources

Datasheet


Order from MACOM

MASW-011111-DIE
Switch, AlGaAs PIN, 93GHz, SP2T
MASW-011111-DIE Distributors