MASW-011263

SPST Reflective AlGaAs PIN Diode Switch

The MASW-011263 is an aluminum-gallium-arsenide (AlGaAs), single pole, single throw (SPST),  PIN diode switch. The switch features enhanced  AlGaAs anodes which are formed using a patented  hetero-junction technology. This technology  produces a switch with less loss than conventional  GaAs processes. These devices are fabricated on  an OMCVD epitaxial wafer using a process  designed for high device uniformity and extremely  low parasitics. The diodes themselves exhibit low  series resistance, low capacitance, and fast  switching speed. They are fully passivated with  silicon nitride and have an additional polymer layer  for scratch protection. The protective coating  prevents damage to the diode junction and anode  air-bridges during handling and assembly. Off chip  bias circuitry is required.  The high electron mobility of AlGaAs and the low  capacitance of the PIN diodes makes this switch  ideal for fast switching, high frequency, multi-throw  switch designs. These AlGaAs PIN switches are  used in switching arrays for radar systems,  radiometers, test equipment and other multi-assembly components 

Product Specifications

Part Number
MASW-011263
Description
SPST Reflective AlGaAs PIN Diode Switch
Min Frequency(MHz)
50
Max Frequency(MHz)
67000
Isolation(dB)
37
Insertion Loss (dB)
0.800
Package Category
Waffle
ROHS
Yes

Features

  • Ultra Broad Bandwidth: 50 MHz to 67 GHz
  • Functional Bandwidth: 50 MHz to 70 GHz
  • Insertion Loss: 0.8 dB @ 50 GHz
  • Isolation: 37 dB @ 50 GHz
  • Low Current Consumption: -5 V for Low Loss State +10 mA for Isolation State
  • Unique AlGaAs Hetero-Junction Anode Technology
  • Silicon Nitride Passivation
  • Polymer Scratch Protection
  • RoHS* Compliant

Applications

  • ISM
  • Aerospace and Defense

Technical Resources

Datasheet


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