MASW-011263
SPST Reflective AlGaAs PIN Diode Switch
The MASW-011263 is an aluminum-gallium-arsenide (AlGaAs), single pole, single throw (SPST), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using a patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch ideal for fast switching, high frequency, multi-throw switch designs. These AlGaAs PIN switches are used in switching arrays for radar systems, radiometers, test equipment and other multi-assembly components
Product Specifications
- Part Number
- MASW-011263
- Description
- SPST Reflective AlGaAs PIN Diode Switch
- Min Frequency(MHz)
- 50
- Max Frequency(MHz)
- 67000
- Isolation(dB)
- 37
- Insertion Loss (dB)
- 0.800
- Package Category
- Waffle
- ROHS
- Yes
Features
- Ultra Broad Bandwidth: 50 MHz to 67 GHz
- Functional Bandwidth: 50 MHz to 70 GHz
- Insertion Loss: 0.8 dB @ 50 GHz
- Isolation: 37 dB @ 50 GHz
- Low Current Consumption: -5 V for Low Loss State +10 mA for Isolation State
- Unique AlGaAs Hetero-Junction Anode Technology
- Silicon Nitride Passivation
- Polymer Scratch Protection
- RoHS* Compliant
Applications
- ISM
- Aerospace and Defense