MASW2000
GaAs
MACOM’s MASW2000 is a use-configuratble, high isolation SPDT switch. It can be absorptive or reflective based on user requirements5. Designed on MACOM’s mature 1-micron MESFET process, this parts is ideal for modules or other packaging for use in the Cellular, GPS, LAN and infrastructure markets.
Product Specifications
- Part Number
- MASW2000
- Description
- GaAs
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 3000
- Isolation(dB)
- 41
- Insertion Loss (dB)
- 0.600
- IIP3(dBm)
- 53
- IP1dB(dBm)
- 26
- Package Category
- Die/Bumped Die
- Package
- DIE
- ROHS
- Yes
Features
- Low Insertion Loss: 0.5 dB Typical @ 2 GHz •
- Reflective/Absorptive Configuration
- Ultra Low DC Power Consumption
- Fast Switching Speed: 22 ns Typical
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches