MASW4030G

GaAs

The MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is fabricated using a mature 1-micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability.

Product Specifications

Part Number
MASW4030G
Description
GaAs
Min Frequency(MHz)
50
Max Frequency(MHz)
4000
Isolation(dB)
53
Insertion Loss (dB)
0.600
IIP3(dBm)
46
IP1dB(dBm)
30
Package Category
Die/Bumped Die
Package
DIE
ROHS
Yes

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