The MASW4030G is an SPDT absorptive or
reflective GaAs MESFET MMIC. This part combines
small size, low insertion loss and power
consumption with high isolation. Ideal for many
applications and module use. It will function well for
designs below 4.0 GHz.
The MASW4030G is fabricated using a mature
1-micron gate length GaAs MESFET process. The
process features full chip passivation for increased
performance and reliability.