MASW6010G
GaAs
MACOM's MASW6010G is an SPDT GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 6 GHz. This die includes full passivation for performance and reliability.
Product Specifications
- Part Number
- MASW6010G
- Description
- GaAs
- Min Frequency(MHz)
- 200
- Max Frequency(MHz)
- 6000
- Isolation(dB)
- 38
- Insertion Loss (dB)
- 0.800
- IIP3(dBm)
- 46
- IP1dB(dBm)
- 27
- Package Category
- Die/Bumped Die
- Package
- DIE
- ROHS
- Yes
Features
- Low Insertion Loss: 0.5 dB Typical @ 4 GHz
- Ultra Low DC Power Consumption
- Fast Switching Speed: 4 ns Typical
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches