MATB-068100
NPN Silicon High Frequency Transistor
The MATB-068100 is designed for low noise, high gain, low cost amplifier applications up to 4 GHz. It’s unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain.
Product Specifications
- Part Number
- MATB-068100
- Description
- NPN Silicon High Frequency Transistor
- Thermal Resistance Junction-Case (deg C/W)
- 80
- Device Voltage (V): BVcbo (V)
- 20
- VCE Breakdown (V) - BJT: - BVceo (V)
- 10
- VEB Breakdown (V) - BJT: - BVebo (V)
- -1.5
- DC Current Gain - BJT: - Hfe (V)
- 50 to 250
- VCE sat (V) - BJT(V)
- -0.15
- VBE sat (V) - BJT(V)
- -1.0
- Max Power Dissipation(mW)
- 600
- Bandwidth: (GHz)
- -2.8
- Device Voltage Temperature Coefficient(mV/C)
- -8.0
- Max Device Current(mA)
- 65
- Noise Figure(dB)
- 2.0
Applications
- Multi Market