Product Detail

MMD805-C12
Silicon Step Recovery Diodes
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.
Features
  • Output Combs to 40+ GHz
  • Transition Times down to 35 ps
  • Screening per MIL-PRF-19500 and MIL-PRF-38534 available
Specifications
  • Junction Capacitance, Min: 2.5 pF
  • Junction Capacitance, Max: 3.5 pF
  • Lifetime: 100 ns
  • Reverse Voltage, Min: 60 V
  • Tt: 250 pS
  • Theta (θJC), max: 15 °C/W
  • Frequency Cutoff (FCO), typ.: 130 GHz
Package Category
  • Chip
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MMD805-C12
Com SRD-Chip, C12
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