MMD805-C12

Silicon Step Recovery Diodes

The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.

Product Specifications

Part Number
MMD805-C12
Short Description
Silicon Step Recovery Diodes
Lifetime(ns)
100
Reverse Voltage, Min(V)
60
Tt(pS)
250
Total Capacitance Min (pF)(pF)
2.50
Total Capacitance Max (pF)(pF)
3.50
Package Category
Chip

Features

  • Output Combs to 40+ GHz
  • Transition Times down to 35 ps
  • Screening per MIL-PRF-19500 and MIL-PRF-38534 available

Technical Resources

Datasheet


Order from MACOM

MMD805-C12
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