Product Detail

MMD830-C11
Silicon Step Recovery Diodes
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.
Specifications
  • Junction Capacitance, Min: 0.5 pF
  • Junction Capacitance, Max: 1 pF
  • Lifetime: 30 ns
  • Reverse Voltage, Min: 25 V
  • Tt: 60 pS
  • Theta (θJC), max: 45 °C/W
  • Frequency Cutoff (FCO), typ.: 700 GHz
Package Category
  • Chip
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MMD830-C11
Silicon Step Recovery Diodes
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