MMD837-C11

Silicon Step Recovery Diodes

The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.

Product Specifications

Part Number
MMD837-C11
Short Description
Silicon Step Recovery Diodes
Lifetime(ns)
10
Reverse Voltage, Min(V)
20
Tt(pS)
60
Total Capacitance Min (pF)(pF)
0.20
Total Capacitance Max (pF)(pF)
0.40
Package Category
Chip

Technical Resources

Datasheet


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MMD837-C11
SRD-Chip,C11