MMDB30-0805-2

Silicon Step Recovery Diodes

The Silicon Mesa Beam Lead Step Recovery diodes provide low capacitance, very fast transition times, and low inductance along with low parasitic capacitance compared to packaged or chip devices. The fast transition times make these devices useful for fast sampling gate drivers, frequency multipliers and comb generators to 40 GHz and beyond.

Product Specifications

Part Number
MMDB30-0805-2
Short Description
Silicon Step Recovery Diodes
Lifetime(ns)
4
Reverse Voltage, Min(V)
14
Tt(pS)
0
Package
0805-2
Package Category
Surfacemount

Features

  • Low Inductance
  • Transition times down to 30 picoseconds in 50 system
  • Rugged Beam Lead constructio
  • Oxide and polymide passivation

Applications

  • ISM

Technical Resources

Datasheet


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MMDB30-0805-2
Silicon Step Recovery Diodes