Product Detail

Silicon Step Recovery Diodes
The Silicon Mesa Beam Lead Step Recovery diodes provide low capacitance, very fast transition times, and low inductance along with low parasitic capacitance compared to packaged or chip devices. The fast transition times make these devices useful for fast sampling gate drivers, frequency multipliers and comb generators to 40 GHz and beyond.
Features
  • Low Inductance
  • Transition times down to 30 picoseconds in 50 system
  • Rugged Beam Lead constructio
  • Oxide and polymide passivation
Applications
  • ISM
Specifications
  • Tt: 0 pS
  • Junction Capacitance, Min: 0.3 pF
  • Junction Capacitance, Max: 0.3 pF
  • Tl: 4 
  • Reverse Voltage, Min: 14 V
Package
  • 0805-2
Package Category
  • Surfacemount
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MMDB30-0805-2
Silicon Step Recovery Diodes
0805-2 Inquire

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