The MNM2xx Series of medium barrier Schottky diodes are metal semiconductor junction devices that have a typical short reverse recovery time. This allows their use at high microwave frequencies when the performance of the n-type may be reduced. The forward I-V of Schottky diodes is determined by the junction metal used. For every different metal selection there is a different forward voltage characteristic or Barrier Height. The devices are best suited for applications through 26 GHz and are ideally suited for use in mixers, detectors, doublers, and modulators.