MNM211

Schottky Mixer Diodes Medium Barrier

The MNM2xx Series of medium barrier Schottky diodes are metal semiconductor junction devices that have a typical short reverse recovery time. This allows their use at high microwave frequencies when the performance of the n-type may be reduced. The forward I-V of Schottky diodes is determined by the junction metal used. For every different metal selection there is a different forward voltage characteristic or Barrier Height. The devices are best suited for applications through 26 GHz and are ideally suited for use in mixers, detectors, doublers, and modulators.

Product Specifications

Part Number
MNM211
Description
Schottky Mixer Diodes Medium Barrier
Vf(V)
0.4500
Vb
5.00
Junction Capacitance(pF)
0.250
Package Category
Bare Die
ROHS
Yes

Features

  • Multi Junction Chip Design
  • Low NoiseSmall Junction Capacitance
  • Junction Capacitance

Technical Resources

Datasheet


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MNM211-20
Schottky Diode,Hermetically Sealed