Product Detail

Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz
Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
  • Guaranteed Performance @ 1090 MHz, 35 Vdc
  • Output Power = 4.0 W Peak
  • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
  • Nitride Passivated
  • Industry Standard Package
  • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
  • Minimum Gain = 10 dB
  • Internal Input Matching for Broadband Operation
  • Aerospace and Defense
  • ISM
  • Min Frequency: 960 MHz
  • Max Frequency: 1,215 MHz
  • Pout: 4 W
  • Gain: 10 dB
  • Efficiency: 40 %
  • Bias Voltage: 35 V
  • Flange Ceramic Pkg
Package Category
  • Ceramic Flange Mount
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Transistor, 960-1215MHz, 35V, 9pk
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