MRF10120

Bipolar

Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters.

Product Specifications

Part Number
MRF10120
Short Description
Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz
Min Frequency(MHz)
960
Max Frequency(MHz)
1215
Bias Voltage(V)
36.0
Pout(W)
120.00
Gain(dB)
8.00
Efficiency(%)
50
Type
Bipolar
Package
Flange Ceramic Pkg
Package Category
Ceramic Flange Mount

Features

  • Guaranteed Performance @ 1.215 GHz, 36 Vdc
  • Silicon Nitride Passivated
  • Hermetically Sealer Industry Standard Package
  • 100% Tested for Load Mismatch at all Phases Angles with 3:1 VSWR
  • Gain = 7.6 dB min., 8 .5 dB (typ.)
  • Output Power = 120 W Peak
  • Internal Input and Output Matching for Broadband Operation
  • Gold Metalized, Emitter Ballasted for Long Life and resistance to Metal Migration

Applications

  • Aerospace and Defense
  • ISM

Order from MACOM

MRF10120
Transistor,960-1215MHz,38V,120pk
MRF10120 Distributors