Facebook
Twitter
LinkedInProduct Detail
Bipolar
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
Features
- Guaranteed Performance @ 1090 MHz, 50 Vdc - Output Power = 150 W Peak Minimum gain = 7.8 dB
- Nitride Passivated
- Industry Standard Package
- 100%Test for Load Mismatch at all Phase Angels with 10:1 VSWR
- Internal Input Matching for Broadband Operation
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Applications
- Aerospace and Defense
- ISM
Specifications
- Min Frequency: 960 MHz
- Max Frequency: 1,215 MHz
- Pout: 150 W
- Gain: 7.8 dB
- Efficiency: 35 %
- Bias Voltage: 50 V
Datasheet
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN3025 - Transistor Mounting and Soldering
- AN4002 - Recommendations For Long-Term Transistor Storage
- AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Package
- Flange Ceramic Pkg
Package Category
- Ceramic Flange Mount
Contact Info
| Part Number | Package | MACOM | Richardson RFPD | DigiKey | Mouser | Richardson Electronics |
|---|---|---|---|---|---|---|
|
MRF1150MB
Transistor, 960-1215MHz, 50V, 150pk
|
CERAMIC |
In Stock: 41
Buy
|
