MRF1150MB
Bipolar
Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.
Product Specifications
- Part Number
- MRF1150MB
- Short Description
- Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz
- Min Frequency(MHz)
- 960
- Max Frequency(MHz)
- 1215
- Bias Voltage(V)
- 50.0
- Pout(W)
- 150.00
- Gain(dB)
- 7.80
- Efficiency(%)
- 35
- Type
- Bipolar
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- Guaranteed Performance @ 1090 MHz, 50 Vdc - Output Power = 150 W Peak Minimum gain = 7.8 dB
- Nitride Passivated
- Industry Standard Package
- 100%Test for Load Mismatch at all Phase Angels with 10:1 VSWR
- Internal Input Matching for Broadband Operation
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Applications
- Aerospace and Defense
- ISM
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)