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RF Power MOSFET 150W, to 175MHz, 28V
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
Features
- Guaranteed performance at 30 MHz, 28V: Output Power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
- Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
- Low Thermal Resistance
- Nitride Passivated Die for Enhanced Reliability
- Ruggedness Tested at Rated Output Power
Applications
- Aerospace and Defense
- ISM
Specifications
- Min Frequency: 5 MHz
- Max Frequency: 175 MHz
- Pout: 150 W
- Gain: 18 dB
- Efficiency: 40 %
- Bias Voltage: 28 V
Datasheet
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN3025 - Transistor Mounting and Soldering
- AN4002 - Recommendations For Long-Term Transistor Storage
- AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Package
- Flange Ceramic Pkg
Package Category
- Ceramic Flange Mount
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