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TMOS
Designed for broadband commercial and military applications
at frequencies to 175 MHz. The high power, high
gain and broadband performance of this device is especially
useful for FM broadcast or TV channel frequency
band solid state transmitters and amplifiers.
Features
- Guaranteed Performance at 175MHz, 28V: - Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50%
- Nitride Passivated Die for Enhanced Reliability
- Ruggedness Tested at Rated Output Power
- Low Thermal Resistance: 0.35°C/W
Applications
- Aerospace and Defense
- ISM
Specifications
- Min Frequency: 5 MHz
- Gain: 12 dB
- Bias Voltage: 28 V
- Efficiency: 50 %
- Max Frequency: 175 MHz
- Pout: 300 W
Datasheet
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN3025 - Transistor Mounting and Soldering
- AN4002 - Recommendations For Long-Term Transistor Storage
- AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Package
- Flange Ceramic Pkg
Package Category
- Ceramic Flange Mount
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