MRF141G
TMOS
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
Product Specifications
- Part Number
- MRF141G
- Short Description
- RF Power MOSFET 300W, 175MHz, 28V
- Min Frequency(MHz)
- 5
- Max Frequency(MHz)
- 175
- Bias Voltage(V)
- 28.0
- Pout(W)
- 300.00
- Gain(dB)
- 12.00
- Efficiency(%)
- 50
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- Guaranteed Performance at 175MHz, 28V: - Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50%
- Nitride Passivated Die for Enhanced Reliability
- Ruggedness Tested at Rated Output Power
- Low Thermal Resistance: 0.35°C/W
Applications
- Aerospace and Defense
- ISM
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)