MRF151

RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Product Specifications

Part Number
MRF151
Short Description
RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Min Frequency(MHz)
5
Max Frequency(MHz)
175
Bias Voltage(V)
50.0
Pout(W)
150.00
Gain(dB)
13.00
Efficiency(%)
40
Type
TMOS
Package
Flange Ceramic Pkg
Package Category
Ceramic Flange Mount

Features

  • Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%
  • Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability

Applications

  • Aerospace and Defense
  • ISM

Order from MACOM

MRF151
Transistor,<175MHz,50V,150W
MRF151 Distributors