MRF151G

1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Product Specifications

Part Number
MRF151G
Short Description
1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Min Frequency(MHz)
5
Max Frequency(MHz)
175
Bias Voltage(V)
50.0
Pout(W)
300.00
Gain(dB)
14.00
Efficiency(%)
50
Type
TMOS
Package
Flange Ceramic Pkg
Package Category
Ceramic Flange Mount

Features

  • Guaranteed Performance at 175 MHz, 50 V:
  • Nitride Passivated Die for Enhanced Reliability
  • Ruggedness Tested at Rated Output Power
  • Low Thermal Resistance — 0.35°C/W
  • Efficiency — 50%
  • Gain — 14 dB (16 dB Typ)
  • Output Power — 300 W

Applications

  • Aerospace and Defense
  • ISM

Order from MACOM

MRF151G
Transistor,Mosfet,<175MHz,50V,300W
MRF151G Distributors