MRF160
The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
Designed primarily for wideband large–signal output and driver from 30–500 MHz.
Product Specifications
- Part Number
- MRF160
- Description
- The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
- Min Frequency(MHz)
- 30
- Max Frequency(MHz)
- 500
- Bias Voltage(V)
- 28.0
- Pout(W)
- 4.00
- Gain(dB)
- 16.00
- Efficiency(%)
- 55
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- N–Channel enhancement mode MOSFET
- Guaranteed 28 V, 500 MHz Performance: Output Power = 4.0 W,Gain = 16 dB (min.), Efficiency = 55% (Typ.)
- 100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR
- Facilitates Manual Gain Control, aLS and Modulation Techniques
- Excellent Thermal Stability, Ideally Suite for Class A Operation
- Low Crss – 0.8 pF Typical at VDS = 28 V
Applications
- Aerospace and Defense
- ISM
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)