MRF175GV

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Product Specifications

Part Number
MRF175GV
Short Description
The RF MOSFET Line 200/150W, 500MHz, 28V
Min Frequency(MHz)
5
Max Frequency(MHz)
225
Bias Voltage(V)
28.0
Pout(W)
200.00
Gain(dB)
14.00
Efficiency(%)
65
Type
TMOS
Package
Flange Ceramic Pkg
Package Category
Ceramic Flange Mount

Features

  • N–Channel Enhancement Mode MOSFET
  • Low Crss — 20 pF typ @ VDS = 28 V
  • Low Thermal Resistance
  • 100% Ruggedness Test at Rate Output Power
  • Guaranteed Performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),Output power — 200 W, Power Gain — 14 dB (Typ.), Efficiency — 65% (Typ.)typ

Applications

  • Aerospace and Defense
  • ISM

Order from MACOM

MRF175GV
Transistor,200W,<225MHz,28V
MRF175GV Distributors