MRF275G

The RF MOSFET Line 150W, 500MHz, 28V

Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz.

Product Specifications

Part Number
MRF275G
Short Description
The RF MOSFET Line 150W, 500MHz, 28V
Min Frequency(MHz)
100
Max Frequency(MHz)
500
Bias Voltage(V)
28.0
Pout(W)
150.00
Gain(dB)
10.00
Efficiency(%)
50
Type
TMOS
Package
Flange Ceramic Pkg
Package Category
Flange Mount

Features

  • N-Channel Enhancement Mode Device
  • 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
  • Overall lower capacitance @ 28 V: Ciss — 135 pF, Crss — 17 pF, Coss — 140 pF
  • Typical Data for Power Amplifiers in Industrial and Commercial Applications:
  • Typical performance @ 225 MHz, 28 Vdc: OutputPpower — 200 W, Power Gain — 15 dB, Efficiency — 65%
  • Simplified AVC, ALC and Modulation
  • Typical Performance @ 400 MHz, 28 Vdc: Output Power — 150 W, Power Gain — 12.5 dB, Efficiency — 60%
  • Guaranteed Performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power Gain — 10 dB, (min.), Efficiency — 50% (min.)

Applications

  • Aerospace and Defense
  • ISM

Order from MACOM

MRF275G
Transistor,<500MHz,28V,150W
MRF275G Distributors