MRF275G
The RF MOSFET Line 150W, 500MHz, 28V
Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz.
Product Specifications
- Part Number
- MRF275G
- Description
- The RF MOSFET Line 150W, 500MHz, 28V
- Min Frequency(MHz)
- 100
- Max Frequency(MHz)
- 500
- Bias Voltage(V)
- 28.0
- Pout(W)
- 150.00
- Gain(dB)
- 10.00
- Efficiency(%)
- 50
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Flange Mount
Features
- N-Channel Enhancement Mode Device
- 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
- Overall lower capacitance @ 28 V: Ciss — 135 pF, Crss — 17 pF, Coss — 140 pF
- Typical Data for Power Amplifiers in Industrial and Commercial Applications:
- Typical performance @ 225 MHz, 28 Vdc: OutputPpower — 200 W, Power Gain — 15 dB, Efficiency — 65%
- Simplified AVC, ALC and Modulation
- Typical Performance @ 400 MHz, 28 Vdc: Output Power — 150 W, Power Gain — 12.5 dB, Efficiency — 60%
- Guaranteed Performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power Gain — 10 dB, (min.), Efficiency — 50% (min.)
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)