MRF323
Bipolar
Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
Product Specifications
- Part Number
- MRF323
- Short Description
- The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V
- Min Frequency(MHz)
- 200
- Max Frequency(MHz)
- 500
- Bias Voltage(V)
- 28.0
- Pout(W)
- 20.00
- Gain(dB)
- 10.00
- Efficiency(%)
- 50
- Type
- Bipolar
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- Guaranteed Performance at 400 MHz, 28 V: Output Power = 20 W., Power Gain = 10 dB min, Efficiency = 50% min.
- Gold Metallization System for High Reliability
- 100% Tested for Load Mismatch at all phase Angels with 30:1 VSWR •
- Computer Controlled Wirebonding Gives Consistent Input Impedance
Applications
- Aerospace and Defense
- ISM
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)