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Bipolar
Designed primarily for wideband large–signal driver and predriver
amplifier stages in the 200–500 MHz frequency range.
Features
- Guaranteed Performance at 400 MHz, 28 V: Output Power = 20 W., Power Gain = 10 dB min, Efficiency = 50% min.
- Gold Metallization System for High Reliability
- 100% Tested for Load Mismatch at all phase Angels with 30:1 VSWR •
- Computer Controlled Wirebonding Gives Consistent Input Impedance
Applications
- Aerospace and Defense
- ISM
Specifications
- Min Frequency: 150 MHz
- Max Frequency: 400 MHz
- Pout: 20 W
- Gain: 10 dB
- Efficiency: 50 %
- Bias Voltage: 28 V
Datasheet
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN3025 - Transistor Mounting and Soldering
- AN4002 - Recommendations For Long-Term Transistor Storage
- AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Package
- Flange Ceramic Pkg
Package Category
- Ceramic Flange Mount
Contact Info
| Part Number | Package | MACOM | Richardson RFPD | DigiKey | Mouser | Rell |
|---|---|---|---|---|---|---|
|
MRF323
Transistor, 200-500MHz, 28V, 20W
|
CERAMIC |
In Stock: 3
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|
