MRF587

Bipolar

Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

Product Specifications

Part Number
MRF587
Short Description
The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
Min Frequency(MHz)
100
Max Frequency(MHz)
500
Bias Voltage(V)
15.0
Pout(W)
0.17
Gain(dB)
11.00
Efficiency(%)
12
Type
Bipolar
Package
Flange Ceramic Pkg
Package Category
Ceramic Flange Mount

Features

  • Low Noise Figure: NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA
  • Low Intermodulation Distortion: TB3 = –70 dB, DIN = 125 dB µV
  • High Power Gain: GU(max) = 16.5 dB (typ.) @ f = 500 MHz
  • All Gold Metal System
  • Ion Implanted
  • High fT — 5.5 GHz
  • Nichrome Emitter Ballast Resistors

Applications

  • Aerospace and Defense
  • ISM

Order from MACOM

MRF587
Transistor,0.17W,500MHz,15V
MRF587 Distributors