MSAT-N25

NIP Diode Attenuator Shunt Element

A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range.

Product Specifications

Part Number
MSAT-N25
Short Description
NIP Diode Attenuator Shunt Element
Breakdown Voltage, Minimum(V)
200
Resistance(Ohm)
1.50
Lifetime(nS)
3000
Thermal Resistance(°C/W)
20.0
Package
2012
Package Category
Plastic Surface Mount
ROHS
Yes
Min Frequency(MHz)
100
Max Frequency(MHz)
10000

Features

  • Low Distortion Harmonics at 85 dBc Typical
  • Broadband performance, beyond 10 GHz
  • Low Insertion loss & high attenuation range, 27 dB

Applications

  • ISM

Technical Resources

Datasheet


Order from MACOM

MSAT-N25
Diode,NIP Attenuator Diode-Package, 2012
MSAT-N25 Distributors