Product Detail

Silicon Schottky P-Type Diodes: Low Barrier
MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.
Features
  • Superior 1/f noise.
  • Better temperature stability than zero bias Schottky diode.
  • Low barrier height
Specifications
  • Dynamic Resistance: 65 ohms
  • Total Capacitance: 0.08 pF
  • Vf: 0.26 V
Package
  • C15c
Package Category
  • Die
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MSS25-047-C15c
Silicon Schottky P-Type Diodes: Low Barrier
C15c Inquire

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