MSS25-047-C15c

Silicon Schottky P-Type Diodes: Low Barrier

MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.

Product Specifications

Part Number
MSS25-047-C15c
Description
Silicon Schottky P-Type Diodes: Low Barrier
Vf(V)
0.2600
Vb
3.00
Total Capacitance(pF)
0.080
Dynamic Resistance(ohms)
65.0
Package Category
Die
Package
C15c

Features

  • Superior 1/f noise.
  • Better temperature stability than zero bias Schottky diode.
  • Low barrier height

Technical Resources

Datasheet


Order from MACOM

MSS25-047-C15c
Silicon Schottky P-Type Diodes: Low Barrier