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Low Barrier Silicon Schottky Diodes
MACOM's MSS30,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of -3 dBm to +3
dBm per diode.
Features
- VF , RD and CJ matching options
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Chip, beam lead or packaged devices
Applications
- ISM
Specifications
- Total Capacitance: 0.22 pF
- Vf: 0.25 V
- Vb: 2
- Dynamic Resistance: 12 ohms
Datasheet
Package
- B10B
Package Category
- Beam Lead
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