MSS30-B46-H40

Silicon Schottky Bridge Quad Diodes

MACOM's MSS CR Series of Schottky crossover quad diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Barrier heights for LO power levels from 3 dBm to +17 dBm are available.

Product Specifications

Part Number
MSS30-B46-H40
Short Description
Silicon Schottky Bridge Quad Diodes
Vf(V)
0.3000
Vb
2.00
Total Capacitance(pF)
0.280
Dynamic Resistance(ohms)
25.0
Package Category
Ceramic Package
Package
H40

Features

  • Available in four barrier heights
  • Beam lead or packaged devices
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available

Applications

  • ISM

Technical Resources

Data Sheet


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MSS30-B46-H40
Silicon Schottky Bridge Quad Diodes