MSS30-CR46-E45
Silicon Schottky P-Type Diodes: Low Barrier
MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general, they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.
Product Specifications
- Part Number
- MSS30-CR46-E45
- Short Description
- Silicon Schottky P-Type Diodes: Low Barrier
- Vb
- 2.00
- Total Capacitance(pF)
- 0.160
- Dynamic Resistance(ohms)
- 22.0
- Package Category
- Ceramic Package
- Package
- E45
Features
- Superior 1/f noise.
- Passivated with silicon nitride.
- Low barrier height.
- Better temperature stability than zero bias Schottky diode.