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Silicon Schottky P-Type Diodes: Low Barrier
MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general, they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.
Features
- Superior 1/f noise.
- Passivated with silicon nitride.
- Low barrier height.
- Better temperature stability than zero bias Schottky diode.
Specifications
- Total Capacitance: 0.16 pF
- Dynamic Resistance: 22 ohms
Datasheet:
Request Datasheet
Package
- E45
Package Category
- Ceramic Package
| Part Number | Package | MACOM | Richardson RFPD | DigiKey | Mouser | Richardson Electronics |
|---|---|---|---|---|---|---|
|
MSS30-CR46-E45
Silicon Schottky P-Type Diodes: Low Barrier
|
E45 | Inquire |
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