MSS30-CR46-H40

Silicon Schottky N-Type Diodes: Low Barrier

MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.

Product Specifications

Part Number
MSS30-CR46-H40
Short Description
Silicon Schottky N-Type Diodes: Low Barrier
Vb
2.00
Total Capacitance(pF)
0.270
Dynamic Resistance(ohms)
22.0
Package Category
Ceramic Package
Package
H40

Features

  • VF, RD and CJ matching options.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available.
  • Chip, beam lead or packaged devices.

Technical Resources

Data Sheet


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MSS30-CR46-H40
Silicon Schottky N-Type Diodes: Low Barrier