Product Detail

P-Type Medium Barrier Si Single
MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHZ
Features
  • Very low 1/f Noise
  • Chip, beam lead or packaged devices.
  • Detector applications to 40 GHz
Specifications
  • Tss: -58 dBm
  • Total Capacitance: 0.2 pF
  • Vf: 0.38 V
Package
  • H27
Package Category
  • Ceramic Package
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MSS39-146-H27
P-Type Medium Barrier Si Single
H27 Inquire

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