MSS39-146-H27
P-Type Medium Barrier Si Single
MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHZ
Product Specifications
- Part Number
- MSS39-146-H27
- Description
- P-Type Medium Barrier Si Single
- Vf(V)
- 0.3800
- Vb
- 3.50
- Total Capacitance(pF)
- 0.200
- Package Category
- Ceramic Package
- Package
- H27
Features
- Very low 1/f Noise
- Chip, beam lead or packaged devices.
- Detector applications to 40 GHz
Applications
- Wired Broadband