MSS39-148-B10B
P-Type Silicon Schottky Diodes
MACOM's MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHz.
Product Specifications
- Part Number
- MSS39-148-B10B
- Description
- P-Type Silicon Schottky Diodes
- Vf(V)
- 0.3800
- Vb
- 3.50
- Total Capacitance(pF)
- 0.100
- Package Category
- Beamlead
- Package
- B10Bp
Features
- Very low 1/f Noise
- Chip, beam lead or packaged devices
- Detector applications to 40 GHz
Applications
- Wired Broadband