Product Detail

P-Type Medium Barrier Si Single
MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHz
Features
  • Very low 1/f Noise
  • Chip, beam lead or packaged devices
  • Detector applications to 40 GHz
Specifications
  • Tss: -58 dBm
  • Total Capacitance: 0.2 pF
  • Vf: 0.38 V
Package
  • 402
Package Category
  • Ceramic Package
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MSS39-152-0402
P-Type Medium Barrier Si Single
402 Inquire

Favorite Parts

Log in to MyMACOM to save your favorite parts.

Recently Viewed

  • No Recent Parts found!

Technical Resources

Resources

Recent Searches

X

By continuing to use this site you consent to the use of cookies in accordance with our Cookie Policy