MSS39-152-B10B

P-Type Silicon Schottky Diodes

MACOM's MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHz.

Product Specifications

Part Number
MSS39-152-B10B
Short Description
P-Type Silicon Schottky Diodes
Vf(V)
0.3800
Vb
3.50
Total Capacitance(pF)
0.150
Package Category
Beamlead
Package
B10Bp

Features

  • Very low 1/f Noise
  • Chip, beam lead or packaged devices
  • Detector applications to 40 GHz

Applications

  • ISM

Technical Resources

Datasheet


Order from MACOM

MSS39-152-B10B
P-Type Silicon Schottky Diodes