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Silicon Schottky N-Type Diodes: Medium Barrier
Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.
Features
- VF, RD and CJ matching options.
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Chip, beam lead or packaged devices.
Specifications
- Total Capacitance: 0.29 pF
- Dynamic Resistance: 28 ohms
Datasheet:
Request Datasheet
Package
- 0805-4
Package Category
- Ceramic Package
| Part Number | Package | MACOM | Richardson RFPD | DigiKey | Mouser | Richardson Electronics |
|---|---|---|---|---|---|---|
|
MSS40-244-0805-4
Silicon Schottky N-Type Diodes: Medium Barrier
|
0805-4 | Inquire |
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