Product Detail

Silicon Schottky N-Type Diodes: Medium Barrier
Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.
Features
  • VF, RD and CJ matching options.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices.
Specifications
  • Total Capacitance: 0.18 pF
  • Dynamic Resistance: 18 ohms
Package
  • 0805-4
Package Category
  • Ceramic Package
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MSS40-248-0805-4
Silicon Schottky N-Type Diodes: Medium Barrier
0805-4 Inquire

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