Silicon Schottky N-Type Diodes: Medium Barrier
Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.
- Part Number
- Silicon Schottky N-Type Diodes: Medium Barrier
- Total Capacitance(pF)
- Dynamic Resistance(ohms)
- Package Category
- Ceramic Package
- VF, RD and CJ matching options.
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Chip, beam lead or packaged devices.