MSS40-248-0805-4

Silicon Schottky N-Type Diodes: Medium Barrier

Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.

Product Specifications

Part Number
MSS40-248-0805-4
Short Description
Silicon Schottky N-Type Diodes: Medium Barrier
Vf(V)
0.4400
Vb
3.00
Total Capacitance(pF)
0.180
Dynamic Resistance(ohms)
18.0
Package Category
Ceramic Package
Package
0805-4

Features

  • VF, RD and CJ matching options.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices.

Technical Resources

Data Sheet


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MSS40-248-0805-4
Silicon Schottky N-Type Diodes: Medium Barrier