MSS40-B53-B45

Silicon Schottky N-Type Diodes: Medium Barrier

MACOM's MSS CR Series of Schottky crossover quad diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Barrier heights for LO power levels from 3 dBm to +17 dBm are available.

Product Specifications

Part Number
MSS40-B53-B45
Description
Silicon Schottky N-Type Diodes: Medium Barrier
Vf(V)
0.4300
Vb
3.00
Total Capacitance(pF)
0.200
Dynamic Resistance(ohms)
15.0
Package Category
Beamlead
Package
B45

Features

  • Available in four barrier heights
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Beam lead or packaged devices

Applications

  • ISM

Technical Resources

Datasheet


Order from MACOM

MSS40-B53-B45
Silicon Schottky N-Type Diodes: Medium Barrier