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Silicon Schottky N-Type Diodes: Medium Barrier
MACOM's MSS CR Series of Schottky crossover
quad diodes are fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in the industry.
Barrier heights for LO power levels from 3 dBm to +17 dBm are
available.
Features
- Five different barrier heights
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Beam lead or packaged devices
Applications
- ISM
Specifications
- Total Capacitance: 0.09 pF
- Vf: 0.47 V
- Vb: 3
- Dynamic Resistance: 22 ohms
Datasheet
Package
- B49
Package Category
- Beamlead
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