Product Detail

High Barrier Si Single
MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer and detector performance is obtained with LO power of +2 dBm to +8 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.
  • VF, RD and CJ matching options.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices.
  • Total Capacitance: 0.23 pF
  • Dynamic Resistance: 20 ohms
  • P55
Package Category
  • Ceramic Package
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Schottky Diode, Chip, Package P55-1
P55-1 Inquire

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