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Silicon Schottky Bridge Quad Diodes
MACOM's MSS CR Series of Schottky crossover
quad diodes are fabricated on N-Type epitaxial substrates
using proprietary processes that yield the highest FCOs in the
industry. Barrier heights for LO power levels from 3 dBm to +17
dBm are available
Features
- Available in four barrier heights
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Beam lead or packaged devices
Applications
- ISM
Specifications
- Vf: 0.5 V
- Vb: 4
- Total Capacitance: 0.27 pF
- Dynamic Resistance: 15 ohms
Datasheet
Package
- E45
Package Category
- Ceramic Package
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