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Silicon Schottky N-Type Diodes: High Barrier
MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum
mixer and detector performance is obtained with LO power of +2 dBm to +8 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.
Features
- VF, RD and CJ matching options.
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Chip, beam lead or packaged devices.
Specifications
- Total Capacitance: 0.33 pF
- Dynamic Resistance: 15 ohms
Datasheet:
Request Datasheet
Package
- H40
Package Category
- Ceramic Package
| Part Number | Package | MACOM | Richardson RFPD | DigiKey | Mouser | Richardson Electronics |
|---|---|---|---|---|---|---|
|
MSS50-CR53-H40
Silicon Schottky N-Type Diodes: High Barrier
|
H40 | Inquire |
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