MSS60-253-E35

Extra High Barrier Silicon Schottky Diodes

The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.

Product Specifications

Part Number
MSS60-253-E35
Short Description
Extra High Barrier Silicon Schottky Diodes
Vf(V)
625.0000
Vb
3.50
Dynamic Resistance(ohms)
12.0
Junction Capacitance(pF)
0.220
Package
E35

Features

  • VF, RD and CJ Matching Options
  • Chip, Beam Lead and Packaged Devices
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available

Technical Resources

Datasheet


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MSS60-253-E35
Extra High Barrier Silicon Schottky Diodes