Product Detail

Extra High Barrier Silicon Schottky Diodes
The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.
  • VF, RD and CJ Matching Options
  • Chip, Beam Lead and Packaged Devices
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available
  • Dynamic Resistance: 18 ohms
  • Vf: 650 V
  • Vb: 3.5 
  • Junction Capacitance: 0.42 pF
  • RS: 13 Typ
  • E45
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Extra High Barrier Silicon Schottky Diodes
E45 Inquire

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