NPA1006A

GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz

The NPA1006A is a GaN on silicon amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package.

The NPA1006A is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.

Product Specifications

Part Number
NPA1006A
Short Description
GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz
Min Frequency(MHz)
20
Max Frequency(MHz)
1000
Supply Voltage(V)
28
PSAT(W)
12.5
Gain(dB)
14.0
Efficiency
65
Test Freq(GHz)
0.90
Package Category
6x5 mm 8-lead PDFN

Features

  • GaN on Si HEMT D-Mode Amplifier
  • Suitable for Linear & Saturated Applications
  • Broadband Operation from 20 - 1000 MHz
  • 50 Ω Input Matched, Output Unmatched
  • 28 V Operation
  • 14 dB Gain @ 900 MHz
  • 65% Drain Efficiency @ 900 MHz
  • 100% RF Tested
  • Lead-Free 6 x 5 mm 8-lead PDFN Package
  • Halogen-Free “Green” Mold Compound
  • RoHS* Compliant

Applications

  • Defense Communications
  • land mobile radio
  • Test and measurement
  • Wireless Infrastructure

Technical Resources

Datasheet


Order from MACOM

NPA1006A
GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz