Product Detail

GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz

The NPA1006A is a GaN on silicon amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package.

The NPA1006A is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.

Features
  • GaN on Si HEMT D-Mode Amplifier
  • Suitable for Linear & Saturated Applications
  • Broadband Operation from 20 - 1000 MHz
  • 50 Ω Input Matched, Output Unmatched
  • 28 V Operation
  • 14 dB Gain @ 900 MHz
  • 65% Drain Efficiency @ 900 MHz
  • 100% RF Tested
  • Lead-Free 6 x 5 mm 8-lead PDFN Package
  • Halogen-Free “Green” Mold Compound
  • RoHS* Compliant
Applications
  • Defense Communications
  • land mobile radio
  • Test and measurement
  • Wireless Infrastructure
Specifications
  • Min Frequency: 20 MHz
  • Max Frequency: 1,000 MHz
  • Supply Voltage: 28 V
  • PSAT: 12.5 W
  • Gain: 14 dB
  • Test Freq: 0.9 GHz
Datasheet
Package Category
  • 6x5 mm 8-lead PDFN
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPA1006A
Transistor, PA, 28V, 12.5W, 20-1000MHz
5X6MM PDFN-8LD Inquire

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