Product Detail

NPA1007
GaN on Silicon Power Amplifier, 20 - 2500 MHz, 28 V, 10 W

 The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1007 is a general purpose device suited for narrowband and broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. 

Features
  • GaN on Si HEMT D-Mode Amplifier
  • 100% RF Tested
  • 43% Drain Efficiency @ 2500 MHz
  • 12.5 dB Gain @ 2500 MHz
  • 28 V Operation
  • Broadband operation from 20 - 2500 MHz
  • Suitable for linear and saturated applications
  • Halogen-Free “Green” Mold Compound
  • Lead-Free 6 x 5 mm 8-lead PDFN Package
  • Fully Matched at Input, Unmatched at Output
  • RoHS* Compliant
Applications
  • Test & Measurement, Defense Communications, Land Mobile Radio and Wireless Infrastructure
Specifications
  • Supply Voltage: 28 V
  • PSAT: 10 W
  • Gain: 10 dB
  • Test Freq: 2 GHz
  • Min Frequency: 20 MHz
  • Max Frequency: 2,500 MHz
Datasheet
Package
  • 6x5mm 8-lead PDFN
Package Category
  • 6x5mm 8-lead PDFN
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPA1007
Power Amplifier, 10W, 20-2500MHz, 5x6mm-DFN
5x6mm PDFN-8LD
In Stock: 41
Buy
In Stock: 299
Buy
NPA1007-SMB
Sample Board, NPA1007
5x6mm PDFN-8LD Inquire
NPA1007-TR0100
PA, 10W, 20-2500MHz, 5x6mm-DFN, 100pc T&R
5x6mm PDFN-8LD Inquire
NPA1007-TR0500
PA, 10W, 20-2500MHz, 5x6mm-DFN, 500pc T&R
5x6mm PDFN-8LD Inquire

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