NPA1007

GaN Amplifier 28 V, 10W, 0.020 - 2.5 GHz

 The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1007 is a general purpose device suited for narrowband and broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. 

Product Specifications

Part Number
NPA1007
Short Description
GaN Amplifier 28 V, 10W, 0.020 - 2.5 GHz
Min Frequency(MHz)
20
Max Frequency(MHz)
2500
Supply Voltage(V)
28
PSAT(W)
10.0
Gain(dB)
10.0
Efficiency
>50
Test Freq(GHz)
2.00
Package
6x5mm 8-lead PDFN
Package Category
6x5mm 8-lead PDFN

Features

  • GaN on Si HEMT D-Mode Amplifier
  • 100% RF Tested
  • 43% Drain Efficiency @ 2500 MHz
  • 12.5 dB Gain @ 2500 MHz
  • 28 V Operation
  • Broadband operation from 20 - 2500 MHz
  • Suitable for linear and saturated applications
  • Halogen-Free “Green” Mold Compound
  • Lead-Free 6 x 5 mm 8-lead PDFN Package
  • Fully Matched at Input, Unmatched at Output
  • RoHS* Compliant

Applications

  • Test & Measurement, Defense Communications, Land Mobile Radio and Wireless Infrastructure

Technical Resources

Datasheet


Order from MACOM

NPA1007
Power Amplifier,10W,20-2500MHz,5x6mm-DFN
NPA1007 Distributors