NPA1008A

GaN Amplifier 28 V, 5 W, 20 - 2700 MHz

The NPA1008A is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 24-lead QFN plastic package.

The NPA1008A is ideally suited for general purpose narrowband to broadband applications.

Product Specifications

Part Number
NPA1008A
Short Description
GaN Amplifier 28 V, 5 W, 20 - 2700 MHz
Min Frequency(MHz)
20
Max Frequency(MHz)
2700
Supply Voltage(V)
28
PSAT(W)
5.0
Gain(dB)
12.0
Efficiency
>45
Test Freq(GHz)
1.90
Package
4x4 mm
Package Category
PQFN

Features

  • GaN on Si HEMT D-Mode Integrated Amplifier
  • 100% RF Tested
  • 45% Drain Efficiency
  • 28 V Operation
  • 50 Ω Input Matched
  • Broadband Operation from 20 - 2700 MHz
  • Suitable for linear and saturated applications
  • Lead-Free 4 x 4 mm 24-lead PQFN Package
  • RoHS* Compliant

Applications

  • Defense Communications
  • land mobile radio
  • Test and measurement
  • Wireless Infrastructure

Technical Resources

Datasheet


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