Product Detail

NPA1008A
GaN Amplifier 28 V, 5 W, 20 - 2700 MHz

The NPA1008A is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 24-lead QFN plastic package.

The NPA1008A is ideally suited for general purpose narrowband to broadband applications.

Features
  • GaN on Si HEMT D-Mode Integrated Amplifier
  • 100% RF Tested
  • 45% Drain Efficiency
  • 28 V Operation
  • 50 Ω Input Matched
  • Broadband Operation from 20 - 2700 MHz
  • Suitable for linear and saturated applications
  • Lead-Free 4 x 4 mm 24-lead PQFN Package
  • RoHS* Compliant
Applications
  • Defense Communications
  • land mobile radio
  • Test and measurement
  • Wireless Infrastructure
Specifications
  • Min Frequency: 20 MHz
  • Max Frequency: 2,700 MHz
  • Supply Voltage: 28 V
  • PSAT: 5 W
  • Gain: 12 dB
  • Test Freq: 1.9 GHz
Datasheet
Package
  • 4x4 mm
Package Category
  • PQFN
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPA1008A
Transistor, 5W Integrated Amplifier
4MM PQFN-24LD Inquire

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