Product Detail

NPT1004D
GaN Power Transistor, 28 V, 45 W DC - 4 GHz

The NPT1004 GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W. This transistor is assembled in an industry standard surface mount plastic package.

Features
  • Optimized for Pulsed, WiMAX, W-CDMA, LTE, & other light thermal load applications from DC - 4 GHz
  • 45 W P3dB CW Power
  • 13.5 dB Small Signal Gain
  • 55% Efficiency @ P3dB
  • Thermally-Enhanced Surface Mount SOIC Package
  • High Reliability Gold Metallization Process
  • Subject to EAR99 Export Control
Applications
  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 28 V
  • Supply Voltage: 28 V
  • PSAT: 45 W
  • Gain: 13 dB
  • Test Freq: 2.5 GHz
  • Min Frequency: 0 MHz
  • Max Frequency: 4,000 MHz
  • Theta J-C: 4.3 C/W
Package
  • SOIC8NE
Package Category
  • Plastic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPT1004D
Transistor, 45W, DC-4.0 GHz
PO150S
In Stock: 24
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In Stock: 133
Buy
PT-0006317
Subassembly, 45W, DC-4.0 GHz
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