NPT1004D

GaN Amplifier 28 V, 45 W, DC - 4 GHz

The NPT1004 GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W. This transistor is assembled in an industry standard surface mount plastic package.

Product Specifications

Part Number
NPT1004D
Short Description
GaN Amplifier 28 V, 45 W, DC - 4 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
4000
Supply Voltage(V)
28
PSAT(W)
45.0
Gain(dB)
13.0
Efficiency
55
Test Freq(GHz)
2.50
Package
SOIC8NE
Package Category
Plastic

Features

  • Optimized for Pulsed, WiMAX, W-CDMA, LTE, & other light thermal load applications from DC - 4 GHz
  • 45 W P3dB CW Power
  • 13.5 dB Small Signal Gain
  • 55% Efficiency @ P3dB
  • Thermally-Enhanced Surface Mount SOIC Package
  • High Reliability Gold Metallization Process
  • Subject to EAR99 Export Control

Applications

  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure

Order from MACOM

NPT1004D
Transistor, 45W, DC-4.0 GHz
NPT1004D Distributors