Product Detail

NPT2018
GaN Amplifier 50 V, 12 W, DC-3.5 GHz

 The NPT2018 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 12.5 W (41 dBm) in an industry standard surface mount plastic package. The NPT2018 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. 

Features
  • Suitable for Linear and Saturated Applications
  • GaN on Si HEMT D-Mode Transistor
  • Tunable from DC - 3.5 GHz
  • 50 V Power Operation
  • 16 dB Gain @ 2.5 GHz
  • 56% Drain Efficiency @ 2.5 GHz
  • Lead-Free 3 x 6 mm 14-Lead PDFN Package
  • 100% RF Tested
  • RoHS* Compliant
Applications
  • Aerospace and Defense
  • Avionics
  • Defense Communications
  • ISM
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 50 V
  • PSAT: 12.5 W
  • Gain: 19 dB
  • Test Freq: 2.5 GHz
  • Min Frequency: 0 MHz
  • Max Frequency: 3,500 MHz
  • Theta J-C: 9.9 C/W
Package
  • 3 x 6 mm 14-Lead PDFN
Package Category
  • Plastic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPT2018
Transistor, 48V 12W DC-4GHz HEMT
3X6MM PDFN-14LD Inquire Buy Buy

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