NPT2018
GaN Amplifier 50 V, 12 W, DC-3.5 GHz
The NPT2018 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 12.5 W (41 dBm) in an industry standard surface mount plastic package. The NPT2018 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Product Specifications
- Part Number
- NPT2018
- Description
- GaN Amplifier 50 V, 12 W, DC-3.5 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 3500
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 12.5
- Gain(dB)
- 19.0
- Efficiency
- 59
- Test Freq(GHz)
- 2.50
- Package
- 3 x 6 mm 14-Lead PDFN
- PSAT(dBm)
- 41
- Package Category
- Plastic
Features
- Suitable for Linear and Saturated Applications
- GaN on Si HEMT D-Mode Transistor
- Tunable from DC - 3.5 GHz
- 50 V Power Operation
- 16 dB Gain @ 2.5 GHz
- 56% Drain Efficiency @ 2.5 GHz
- Lead-Free 3 x 6 mm 14-Lead PDFN Package
- 100% RF Tested
- RoHS* Compliant
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Moisture Effects on the Soldering of Plastic Encapsulated Devices
- Surface Mounting Instructions for PQFN Packages
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)