NPT2018

GaN Amplifier 50 V, 12 W, DC-3.5 GHz

 The NPT2018 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 12.5 W (41 dBm) in an industry standard surface mount plastic package. The NPT2018 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. 

Product Specifications

Part Number
NPT2018
Short Description
GaN Amplifier 50 V, 12 W, DC-3.5 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
3500
Supply Voltage(V)
50
PSAT(W)
12.5
Gain(dB)
19.0
Efficiency
59
Test Freq(GHz)
2.50
Package
3 x 6 mm 14-Lead PDFN
Package Category
Plastic

Features

  • Suitable for Linear and Saturated Applications
  • GaN on Si HEMT D-Mode Transistor
  • Tunable from DC - 3.5 GHz
  • 50 V Power Operation
  • 16 dB Gain @ 2.5 GHz
  • 56% Drain Efficiency @ 2.5 GHz
  • Lead-Free 3 x 6 mm 14-Lead PDFN Package
  • 100% RF Tested
  • RoHS* Compliant

Applications

  • Aerospace and Defense
  • Avionics
  • Defense Communications
  • ISM
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure

Order from MACOM

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