NPT25100B

GaN Amplifier 28 V, 125 W, 2.1 - 2.7 GHz

The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.

Product Specifications

Part Number
NPT25100B
Short Description
GaN Amplifier 28 V, 125 W, 2.1 - 2.7 GHz
Min Frequency(MHz)
2100
Max Frequency(MHz)
2700
Supply Voltage(V)
28
PSAT(W)
125.0
Gain(dB)
16.5
Efficiency
26
Test Freq(GHz)
2.50
Package
Flange Ceramic Pkg
Package Category
Ceramic

Features

  • High Reliability Gold Metallization Process
  • Thermally Enhanced Industry Standard Package
  • 100% RF Tested
  • Characterized for Operation up to 32V
  • 10W Linear Power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
  • 90W P3dB CW Power
  • 125W P3dB Peak Envelope Power
  • RoHS Compliant

Applications

  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure

Technical Resources

Datasheet

Application Notes


Order from MACOM

NPT25100B
Amplifier,GaN,DC-2700MHz
NPT25100B Distributors