Product Detail

NPT25100B
GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz

The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.

Features
  • High Reliability Gold Metallization Process
  • Thermally Enhanced Industry Standard Package
  • 100% RF Tested
  • Characterized for Operation up to 32V
  • 10W Linear Power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
  • 90W P3dB CW Power
  • 125W P3dB Peak Envelope Power
  • RoHS Compliant
Applications
  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 28 V
  • PSAT: 125 W
  • Gain: 16.5 dB
  • Test Freq: 2.5 GHz
  • Min Frequency: 2,100 MHz
  • Max Frequency: 2,700 MHz
  • Theta J-C: 1.8 C/W
Package
  • Flange Ceramic Pkg
Package Category
  • Ceramic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPT25100B
Amplifier, GaN, DC-2700MHz
AC780BP-F2
In Stock: 211
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In Stock: 1
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